2SC5998 - Renesas

2SC5998 NPN Transistor

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz • High.

Features

• High Transition Frequency fT = 11 GHz typ.
• High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz
• High Collector to Emitter Voltage VCEO = 5 V
• Ideal for up to 2 GHz applications. e.g.FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “YC-”. 3 1 2 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Item Symbol Collec.