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Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ .
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 700 V
• High-speed switching: tf < 200 ns
• Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
1.1±0.1
0.7±0.1
5.45±0.3
Collector-base voltage (Emitter open) VCBO
1 700
V
e e) Collector-emitter voltage (E-B short) VCES
1 700
V
c typ Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d stage. tinued Emitter-base voltage (Collector open) VEBO.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
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| 2 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
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| 3 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 5 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
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| 6 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
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| 7 | 2SC5907 |
Renesas |
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| 8 | 2SC5909 |
Panasonic Semiconductor |
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|
| 9 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 10 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5914 |
Panasonic |
Silicon NPN Transistor |
|
| 12 | 2SC5915 |
Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|