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Power Transistors 2SC5993 Silicon NPN epitaxial planar type For power amplification For TV VM circuit 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw. 1.4.
• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT)
• Full-pack package which can be installed to the heat sink with one
screw.
1.4±0.2 1.6±0.2
2.6±0.1
/
■ Absolute Maximum Ratings TC = 25°C
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
180
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
180
V
sta tinu Emitter-base voltage (Collector open) VEBO
6
V
a e cycle iscon Collector current
IC
1.5
A
life d, d Peak collector current
ICP
3
A
n .
2SC5993 - INCHANGE
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 ·100.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5991 |
Sanyo Semicon Device |
NPN Transistor |
|
| 2 | 2SC5994 |
Sanyo Semicon Device |
NPN Transistor |
|
| 3 | 2SC5994 |
ON Semiconductor |
NPN Single Bipolar Transistor |
|
| 4 | 2SC5998 |
Renesas |
NPN Transistor |
|
| 5 | 2SC5999 |
Sanyo Semicon Device |
NPN Transistors |
|
| 6 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 10 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 11 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|