·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5042 Fig.1 simplified outline (TO-3PML) and symbol Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-b.
llector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V IE=0 VCE=1600V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 15 4 800 1 10 1 25 7 MIN TYP. MAX 5 1.5 UNIT V V V mA µA mA SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 Switching times tstg tf Storage time Fall time IC=4A;RL=50A IB1=0.7A;- IB2=2A VCC=200V 2.0 0.1 0.2 µs µs 2 www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors .
·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Min.
Ordering number:EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizonta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC504 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5041 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5043 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC5043 |
INCHANGE |
NPN Transistor | |
5 | 2SC5044 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5045 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5046 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
8 | 2SC5047 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5047 |
Inchange Semiconductor |
Silicon NPN Transistor | |
10 | 2SC5048 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5048 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC5049 |
Hitachi Semiconductor |
NPN TRANSISTOR |