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2SC5042 |
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| Part Number | 2SC5042 |
| Manufacturer | INCHANGE |
| Description | ·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
METER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
ICEO
Collector Cutoff Current
VCE= 800V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC current gain
IC= 1A ; VCE= 5V
hFE-1
DC current gain
IC= 5A ; VCE= 5V
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
uA
1.0 mA
15
25
4
7
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information c... |
| Document |
 2SC5042 Data Sheet
PDF 185.17KB |
| Distributor | Stock | Price | Buy |
|---|
