Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5043].
· High speed (tf=100ns typ).
· High reliability (HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC5043]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
5.45
5.45
1 : Base 2 : Col.
·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC504 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5041 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5042 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC5042 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC5042 |
INCHANGE |
NPN Transistor | |
6 | 2SC5044 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5045 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
8 | 2SC5046 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5047 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC5047 |
Inchange Semiconductor |
Silicon NPN Transistor | |
11 | 2SC5048 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5048 |
SavantIC |
SILICON POWER TRANSISTOR |