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Ordering number:EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5044] 16.0 3.4 5.6 3.1 5.0.
· High speed (tf=100ns typ).
· High reliability (HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5044]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC504 |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 2 | 2SC5041 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5042 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC5042 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC5042 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5043 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC5043 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC5045 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC5046 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5047 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5047 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC5048 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|