Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.
· High speed (tf=100ns typ).
· High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5046]
20.0 3.3
5.0
2.0 1.0
20.7 26.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
2.0 3.4
1.2 1 23
5.45 5.45
2.8
0.6
1 : Base 2 : Collector 3 : Emitter SAN.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC504 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5041 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5042 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC5042 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC5042 |
INCHANGE |
NPN Transistor | |
6 | 2SC5043 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SC5043 |
INCHANGE |
NPN Transistor | |
8 | 2SC5044 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5045 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC5047 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
11 | 2SC5047 |
Inchange Semiconductor |
Silicon NPN Transistor | |
12 | 2SC5048 |
Toshiba Semiconductor |
NPN TRANSISTOR |