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Ordering number:EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5047] 20.0 3.3 5.
· High speed (tf=100ns typ).
· High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5047]
20.0 3.3 5.0
26.0
2.0 3.4
2.0
1.0
20.7
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
h t t p : / / w w w . D a t a S h e e t 4 U
5.45
5.45
Conditions
2..
2SC5047 - Inchange Semiconductor
·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1600V(Min) ·Minimum Lot-to-Lot variations for robust device p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC504 |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 2 | 2SC5041 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5042 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC5042 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC5042 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5043 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC5043 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC5044 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC5045 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5046 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC5048 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SC5048 |
SavantIC |
SILICON POWER TRANSISTOR |
|