2SC504 - Toshiba

2SC504 Silicon NPN Epitaxial Type Transistor

: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II.

Features

• High Transition Frequency : fx=80MHz (Typ.)
• High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC503 Voltage 2SC504 Collector- Emitter Voltage 2SC503 2SC504 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO vebo ic IB PC T i T Htg RATING 100 80 80 60 5 600 100 800 6 175 -65^175 UNIT V .