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·High Breakdown Voltage- : VCBO= 150V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high speed and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.
) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.6 V 1.5 V 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 uA hFE DC Current Gain IC= 5A; VCE= 5V 30 120 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not d.
2SC3762 - SavantIC
·With TO-3PML package ·High speed switching ·High current capability APPLICATIONS ·For use in high speed and power switc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3769 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 4 | 2SC3707 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3707 |
Kexin |
Silicon NPN Transistor |
|
| 6 | 2SC3708 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC3709 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SC3709A |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3709A |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC3710 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC3710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC3710A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|