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Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features · Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications Absolute M.
· Adoption of FBET process.
· AF amp, AF power amp.
· High breakdown voltage : VCEO>80V
Package Dimensions
unit:mm 2003B
[2SA1450/2SC3708]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SA1450
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Col.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 3 | 2SC3707 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3707 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3709 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC3709A |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3709A |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3710 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3710A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2SC3710A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3714 |
Inchange Semiconductor |
Silicon NPN Transistor |
|