2SC3709 - Inchange Semiconductor

2SC3709 Silicon NPN Power Transistor

·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 6.

Features

tage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IB1= -IB2= 0.3A, RL= 5Ω; VCC≈ 30V,  hFE-1 Classifications O Y 70-140 120-240 2SC3709 MIN TYP. MAX UNIT 50 V 0.4 V 1.2 V 10 μA 10 μA 70 240 40 .