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2SC3762 |
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| Part Number | 2SC3762 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 150V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
0.6
V
1.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
100 uA
hFE
DC Current Gain
IC= 5A; VCE= 5V
30
120
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not d... |
| Document |
 2SC3762 Data Sheet
PDF 173.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3762 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC3769 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|
| 5 | 2SC3707 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|