SMD Type Silicon NPN Epitaxial Planar type 2SC3707 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Possible with the small current and low voltage High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing +0.1 1.3-0.1 Features 1 +.
1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Maxim.
Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm ■ Features • Possible with the s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor | |
3 | 2SC3708 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
4 | 2SC3709 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | 2SC3709A |
INCHANGE |
NPN Transistor | |
6 | 2SC3709A |
Toshiba |
Silicon NPN Transistor | |
7 | 2SC3710 |
INCHANGE |
NPN Transistor | |
8 | 2SC3710 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3710A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SC3710A |
Toshiba Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3714 |
Inchange Semiconductor |
Silicon NPN Transistor | |
12 | 2SC3719 |
Inchange Semiconductor |
Power Transistor |