·With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base.
lector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A;IB=0.3A IC=6A;IB=0.3A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V, f=1MHz IC=1A ; VCE=5V 70 40 MIN 80 2SC3710 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V 0.2 0.9 0.4 1.2 10 10 240 V V µA µA 220 80 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=0.3A VCCB30V ,RL=5C 0.2 1.0 0.2 µs µs µs hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semicondu.
·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3710A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SC3710A |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3714 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SC3719 |
Inchange Semiconductor |
Power Transistor | |
5 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
6 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor | |
7 | 2SC3707 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
8 | 2SC3707 |
Kexin |
Silicon NPN Transistor | |
9 | 2SC3708 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
10 | 2SC3709 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | 2SC3709A |
INCHANGE |
NPN Transistor | |
12 | 2SC3709A |
Toshiba |
Silicon NPN Transistor |