Transistors 2SC3704 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 • High forward transfer gain S21e2 0.4±0.2 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion t.
• Low noise figure NF
0.40+
–00..0150 3
0.16+
–00..0160
1.50
–+00..0255 2.8
–+00..32
• High forward transfer gain S21e2
0.4±0.2
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
1.9±0.1 2.90+
–00..0250
5˚
(0.65)
/
■ Absolute Maximum Ratings Ta = 25°C
10˚
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
0 to 0.1 1.1
–+00..12 1.1
–+00..13
V
a e .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor | |
2 | 2SC3707 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3707 |
Kexin |
Silicon NPN Transistor | |
4 | 2SC3708 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
5 | 2SC3709 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC3709A |
INCHANGE |
NPN Transistor | |
7 | 2SC3709A |
Toshiba |
Silicon NPN Transistor | |
8 | 2SC3710 |
INCHANGE |
NPN Transistor | |
9 | 2SC3710 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3710A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | 2SC3710A |
Toshiba Semiconductor |
Silicon NPN Transistor | |
12 | 2SC3714 |
Inchange Semiconductor |
Silicon NPN Transistor |