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·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto.
EO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC=60mA; IB=12mA 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 60mA; IB= 12mA 2.0 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 30mA ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IE=30mA ; VCE= 10V 6 MHz COB Output Capacitance IE= 0 ; VCB= 100V;ftest= 1.0MHz 5.0 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without n.
2SC3676 - Sanyo Semicon Device
Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Vo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3675 |
Sanyo Semicon Device |
NPN Transistor |
|
| 6 | 2SC3675 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3677 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3678 |
Sanken electric |
Silicon NPN Transistor |
|
| 9 | 2SC3678 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3678 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 11 | 2SC3679 |
Sanken electric |
Silicon NPN Transistor |
|
| 12 | 2SC3679 |
SavantIC |
SILICON POWER TRANSISTOR |
|