2SC3671 - Toshiba Semiconductor

2SC3671 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm • High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • Hig.

Features

/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics .