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2SC3676 |
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| Part Number | 2SC3676 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-vol... |
| Features |
· High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C ... |
| Document |
 2SC3676 Data Sheet
PDF 94.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3675 |
Sanyo Semicon Device |
NPN Transistor |
|