2SC3677 - INCHANGE

2SC3677 NPN Transistor

·Low Collector Saturation Voltage ·High breakdown voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VC.

Features

mitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE DC Current Gain IC=0.5A ; VCE= 5V MIN TYP. MAX UNIT 60 V 1.5 V 2.0 V 10 μA 10 μA 800 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are int.