2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V.
. b. Lot No.
I C
– V CE Characteristics (Typical)
3
V CE (sat),V BE (sat)
– I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V)
I C
– V BE Temperature Characteristics (Typical)
3 (V CE =4V)
500mA
400mA
300mA
1
–55˚C (Case Tem
25˚C (Cas
V B E (sat)
p)
Collector Current I C (A)
2
200 mA
Collector Current I C (A)
e Temp)
Temp)
2
mp)
mp) 25˚C (C ase Te
2 5 Cas eT ˚C e m p)
–55
˚C
(
V C E (sat) 0 0.02 0.05 0.1 0.5 1
12
5˚C
0
0
1
2
3
4
3
0
0
0.2
0.4
0.6
0.8
.
·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applicatio.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | 2SC3675 |
Sanyo Semicon Device |
NPN Transistor | |
6 | 2SC3675 |
INCHANGE |
NPN Transistor | |
7 | 2SC3676 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC3676 |
INCHANGE |
NPN Transistor | |
9 | 2SC3677 |
INCHANGE |
NPN Transistor | |
10 | 2SC3679 |
Sanken electric |
Silicon NPN Transistor | |
11 | 2SC3679 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3679 |
Inchange Semiconductor |
Silicon NPN Power Transistors |