2SC3679 - Sanken electric

2SC3679 Silicon NPN Transistor

2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO.

Features

b. Lot No. I C
  – V CE Characteristics (Typical) 5 V CE (sat),V BE (sat)
  – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) I C
  – V BE Temperature Characteristics (Typical) 5 (V C E =4V) 700mA 600mA 500mA 2 Collector Current I C (A) 300mA 3 Collector Current I C (A) 4 400 mA 4 3 mp) Temp (Case 25˚C 200mA ) e Te 2 I B =100mA 1 2 Te m p) 25˚ C
  –5 5 ˚C 1 1 V C E (sat) 0 0.03 0.05 0.1 0.5 Ca 125˚C ( se 0 0 1 2 3 4 1 5 10 0 0 0.2 0.4 0.6 0.8
  –55˚.