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2SC3676 |
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| Part Number | 2SC3676 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High volt... |
| Features |
EO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
900
V
VCE(sat) Collector-Emitter Saturation Voltage IC=60mA; IB=12mA
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 60mA; IB= 12mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
10
μA
hFE
DC Current Gain
IC= 30mA ; VCE= 5V
30
fT
Current-Gain—Bandwidth Product
IE=30mA ; VCE= 10V
6
MHz
COB
Output Capacitance
IE= 0 ; VCB= 100V;ftest= 1.0MHz
5.0
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without n... |
| Document |
 2SC3676 Data Sheet
PDF 179.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3670 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3671 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3673 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3675 |
Sanyo Semicon Device |
NPN Transistor |
|