1SS416CT - Toshiba

1SS416CT Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 1SS416CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltag.

Features

e in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2.