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Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2002-11 2021-12-16 Rev.4.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwis.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Pulse width 10 ms
4. Electrical Characteristics (Unless otherwise specified, Ta = 25
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Characteristics
Forward voltage Forward voltage Forward voltage .
1SS413 - SEMTECH
Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS41 |
Rohm |
Switching Diode |
|
| 2 | 1SS412 |
Toshiba |
Silicon Diode |
|
| 3 | 1SS413CT |
Toshiba |
Schottky Barrier Diode |
|
| 4 | 1SS416 |
Toshiba |
Schottky Barrier Diode |
|
| 5 | 1SS416CT |
Toshiba |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 6 | 1SS417 |
Toshiba |
Schottky Barrier Diode |
|
| 7 | 1SS417CT |
Toshiba |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 8 | 1SS417FN2 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER |
|
| 9 | 1SS417TM |
Pan Jit International |
HIGH SPEED SWITCHING DIODE |
|
| 10 | 1SS418 |
Toshiba |
Silicon Diode |
|
| 11 | 1SS419 |
Toshiba |
Silicon Diode |
|
| 12 | 1SS400 |
LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE |
|