1SS417 - Toshiba

1SS417 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS417 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2003-06 1 2014-07-08 Rev.3.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note .

Features

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Measured with a 10 ms pulse. 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Forward voltage Forward voltage.