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1SS416CT |
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| Part Number | 1SS416CT |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 1SS416CT Unit: mm CATH... |
| Features |
e in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Forward voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2... |
| Document |
 1SS416CT Data Sheet
PDF 195.99KB |
| Distributor | Stock | Price | Buy |
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