P1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Voltage 40 V Current 100 mA Features Small package Low forward voltage : VF(3)=0.51V(typ.) Low reverse current : IR=5A(Max.) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.. (Halogen Free) Mechanical Data Case: DFN 2L plastic case Terminals: .
Small package
Low forward voltage : VF(3)=0.51V(typ.)
Low reverse current : IR=5A(Max.)
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std..
(Halogen Free)
Mechanical Data
Case: DFN 2L plastic case
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking:7F
0.042(1.05) 0.037(0.95)
0.026(0.65) 0.022(0.55)
0.022(0.55) 0.017(0.45)
0.013(0.32) 0.008(0.22)
0.002(0.05)MAX.
0.022(0.55) 0.017(0.45)
PIN NO.1 IDENTIFICATION
MAXIMUM RATINS (TA=25oC)
PARAMETER Maximum (peak) revers.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS417 |
Toshiba |
Schottky Barrier Diode | |
2 | 1SS417CT |
Toshiba |
Silicon Epitaxial Schottky Barrier Type Diode | |
3 | 1SS417TM |
Pan Jit International |
HIGH SPEED SWITCHING DIODE | |
4 | 1SS41 |
Rohm |
Switching Diode | |
5 | 1SS412 |
Toshiba |
Silicon Diode | |
6 | 1SS413 |
SEMTECH |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | |
7 | 1SS413 |
Toshiba |
Schottky Barrier Diode | |
8 | 1SS413CT |
Toshiba |
Schottky Barrier Diode | |
9 | 1SS416 |
Toshiba |
Schottky Barrier Diode | |
10 | 1SS416CT |
Toshiba |
Silicon Epitaxial Schottky Barrier Type Diode | |
11 | 1SS418 |
Toshiba |
Silicon Diode | |
12 | 1SS419 |
Toshiba |
Silicon Diode |