1SS418 - Toshiba

1SS418 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application • Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V sESC Maximum (peak) forward curre.

Features

. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR IR CT Test Circuit Test Condition ― IF = 1mA ― IF = 5mA ― IF = 100mA ― VR = 10V ― VR = 30V ― V.