1SS412 - Toshiba

1SS412 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (typ.) : IR = 0.1 nA (typ.) : CT = 3.0 pF (typ.) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re.

Features

are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance (between cathode and anode) Symbol VF IR CT Test Circuit Test Condition ― IF = 100 mA ― VR = 80 V ― VR = 0, f = 1 MHz Min Typ. Max Unit ―.