1SS413 |
Part Number | 1SS413 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode ©2021 1 Toshiba ... |
Features |
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Pulse width 10 ms
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
Forward voltage Forward voltage Forward voltage ... |
Document |
1SS413 Data Sheet
PDF 208.28KB |
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