11NM80 - ST Microelectronics

11NM80 STF11NM80

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFET.

Features

Order codes VDSS RDS(on) max RDS(on)
*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω
*nC 11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)
*Qg in the industry Applications
■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop.