This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IP.
Type
VDSS (@TJmax)
STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
650 V 650 V 650 V 650 V 650 V 650 V
RDS(on) max
0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω
ID
10 A 10 A 10 A 10 A 10 A(1) 10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11NM60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 11NM60-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | 11NM60ND |
STMicroelectronics |
N-Channel MOSFET | |
4 | 11NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 11NM65-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11NM65N |
STMicroelectronics |
STD11NM65N | |
7 | 11NM40 |
Unisonic Technologies |
N-Channel MOSFET | |
8 | 11NM70 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 11NM80 |
ST Microelectronics |
STF11NM80 | |
10 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
11 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
12 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |