Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
* 6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Order codes
VDSS @ TJmax
RDS(on) max
ID
STD11NM65N STF11NM65N STFI11NM65N STP11NM65N
710 V < 0.455 Ω 11 A
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
• Switching applications
Description
* 6
$0Y
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is ther.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 11NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 11NM65-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 11NM60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 11NM60-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | 11NM60ND |
STMicroelectronics |
N-Channel MOSFET |
|
| 7 | 11NM40 |
Unisonic Technologies |
N-Channel MOSFET |
|
| 8 | 11NM70 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 11NM80 |
ST Microelectronics |
STF11NM80 |
|
| 10 | 11N06LT |
NXP Semiconductors |
PHB11N06LT |
|
| 11 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN |
|
| 12 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |
|