The UTC 11NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A * By using.
* RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM60L-TA3-T
11NM60G-TA3-T
11NM60L-TF3-T
11NM60G-TF3-T
11NM60L-TF1-T
11NM60G-TF1-T
11NM60L-TM3-T
11NM60G-TM3-T
11NM60L-TN3-R
11NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-251 TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11NM60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | 11NM60ND |
STMicroelectronics |
N-Channel MOSFET | |
4 | 11NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 11NM65-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11NM65N |
STMicroelectronics |
STD11NM65N | |
7 | 11NM40 |
Unisonic Technologies |
N-Channel MOSFET | |
8 | 11NM70 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 11NM80 |
ST Microelectronics |
STF11NM80 | |
10 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
11 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
12 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |