The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM40 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correctio.
* RDS(ON) < 0.38Ω @ VGS=10V, ID=5.7A
* High switching speed
* Low effective output capacitance (Typ.=95pF)
* Low gate charge (Typ.=40nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM40L-TF3-T
11NM40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F
Pin Assignment 123 GDS
Packing Tube
MARKING
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QW-R502-A38.b
11NM40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11NM60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 11NM60-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | 11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | 11NM60ND |
STMicroelectronics |
N-Channel MOSFET | |
5 | 11NM65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11NM65-U2 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 11NM65N |
STMicroelectronics |
STD11NM65N | |
8 | 11NM70 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 11NM80 |
ST Microelectronics |
STF11NM80 | |
10 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
11 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
12 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |