| No. | Partie # | Fabricant | Description | Fiche Technique |
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VBsemi |
N-Channel Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (S |
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VBsemi |
N-Channel MOSFET • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO- |
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VBsemi |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • |
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VBsemi |
N-Channel Power MOSFET • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO- |
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VBsemi |
N-Channel MOSFET • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: www.VBsemi.com TO-220AB S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Vol |
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VBsemi |
Dual N-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbo |
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VBsemi |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter G GDS Top View S |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source |
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VBsemi |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) GD S D G S N-Channel MOSFET |
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VBsemi |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoH |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Ga |
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