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VBZFB40N06 |
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| Part Number | VBZFB40N06 |
| Manufacturer | VBsemi |
| Description | VBZFB40N06 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-251 60 0.032 0.036 25 Single D FEATURES ... |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °... |
| Document |
 VBZFB40N06 Data Sheet
PDF 323.38KB |
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