| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
TK4A60DB n 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product |
|
|
|
|
Toshiba |
TK4A60DA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK40E10N1 1: Gat |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain |
|
|
|
|
Toshiba Semiconductor |
MOSFET |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET JEDEC ⎯ JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decreas |
|
|
|
|
Toshiba Semiconductor |
MOSFETs (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 8.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) High-speed switching (2) Low gate charge: QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 8.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Cir |
|
|
|
|
Toshiba Semiconductor |
MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
|
|
|
|
Toshiba Semiconductor |
MOSFET urrent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circui |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance : RDS(ON) = 1.5 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.0 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Pa |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 1.8 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Pac |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain |
|
|
|
|
Toshiba Semiconductor |
Field Effect Transistor icant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appr |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET C-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.0374 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK40J20D 1: Gate (G) 2: Drain |
|