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K4A60DB |
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| Part Number | K4A60DB |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer ... |
| Features |
n 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual relia... |
| Document |
 K4A60DB Data Sheet
PDF 256.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4A60DA |
Toshiba |
TK4A60DA |
|
| 2 | K4A4G045WD |
Samsung |
4Gb D-die DDR4 SDRAM |
|
| 3 | K4A4G045WE |
Samsung |
4Gb E-die DDR4 SDRAM |
|
| 4 | K4A4G085WD |
Samsung |
4Gb D-die DDR4 SDRAM |
|
| 5 | K4A4G085WE |
Samsung |
4Gb E-die DDR4 SDRAM |
|