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TK40S10K3Z |
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| Part Number | TK40S10K3Z |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK40S10K3Z 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) AEC-Q101 quali... |
| Features |
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
Start of commercial production
1
2011-03 2014-08-04 Rev.5.0
TK40S10K3Z
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Aval... |
| Document |
 TK40S10K3Z Data Sheet
PDF 245.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK40S06N1L |
Toshiba |
N-channel MOSFET |
|
| 2 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET |
|
| 5 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET |
|