TK4P55DA |
Part Number | TK4P55DA |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ.) (2) High forward transfer admitta... |
Features |
(1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 1.8 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P55DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of commercial production
2009-12
1
2015-03-06
Rev.1.0
TK4P55DA
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
550
V
Gate-source voltage
VGSS
±30
Drain curr... |
Document |
TK4P55DA Data Sheet
PDF 817.99KB |
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