TK40P04M1 |
Part Number | TK40P04M1 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-Channel MOS (U-MOS-H) TK40P04M1 1. Applications • Switching Voltage Regulators • Motor Drivers • Power Management Switches 2. Features (1) High-speed switching (2) Low gate charge: ... |
Features |
(1) High-speed switching (2) Low gate charge: QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 8.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK40P04M1
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2016 Toshiba Corporation
1
Start of commercial production
2008-12
2016-02-23 Rev.4.0
TK40P04M1
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V... |
Document |
TK40P04M1 Data Sheet
PDF 271.40KB |
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