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TK4P60DA |
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| Part Number | TK4P60DA |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward tran... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P60DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
©2015 Toshiba Corporation
1
Start of commercial production
2009-12
2015-08-03 Rev.3.0
TK4P60DA
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drai... |
| Document |
 TK4P60DA Data Sheet
PDF 272.57KB |
| Distributor | Stock | Price | Buy |
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