ST Microelectronics PD5 fiche technique

No.	Partie #	Fabricant	Description
1	PD57002-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed
2	PD57045	STMicroelectronics	RF POWER TRANSISTORS of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57045 XPD57045 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57045S XPD57045S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source
3	PD57006S-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is de
4	PD57006-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is de
5	PD55003-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain
6	PD55015-E	STMicroelectronics	RF power transistor ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect
7	PD54008-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is d
8	PD54008	STMicroelectronics	RF POWER TRANSISTORS y. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54008 PD54008 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54008S XPD54008S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 OC) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Ga
9	PD54008S	STMicroelectronics	RF POWER TRANSISTORS y. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54008 PD54008 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54008S XPD54008S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 OC) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Ga
10	PD57018-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is des
11	PD57018	STMicroelectronics	RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57018 XPD57018 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57018S XPD57018S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta
12	PD57018S	STMicroelectronics	RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57018 XPD57018 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57018S XPD57018S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta
13	PD57030	STMicroelectronics	RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta
14	PD57030S	STMicroelectronics	RF POWER TRANSISTORS sembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Volta
15	PD57045S	STMicroelectronics	RF POWER TRANSISTORS of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57045 XPD57045 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57045S XPD57045S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source
16	PD57030-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is d
17	PD55035S-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It
18	PD55035-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It
19	PD54008S-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is d
20	PD57045-E	STMicroelectronics	RF POWER transistor ■ Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is d