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PD54008S-E |
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| Part Number | PD54008S-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V ... |
| Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performanc... |
| Document |
 PD54008S-E Data Sheet
PDF 480.65KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PD54008S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 2 | PD54008 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 3 | PD54008-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD54003-E |
ST Microelectronics |
RF POWER transistor |
|
| 5 | PD54003L |
STMicroelectronics |
RF POWER TRANSISTORS |
|