PD55003-E |
Part Number | PD55003-E |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 1... |
Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The PD55003’s superior linearity performance makes... |
Document |
PD55003-E Data Sheet
PDF 398.26KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | PD55003L-E |
STMicroelectronics |
RF POWER transistor | |
2 | PD55008-E |
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3 | PD55008S-E |
STMicroelectronics |
RF POWER transistor | |
4 | PD55015-E |
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RF power transistor | |
5 | PD55015S-E |
STMicroelectronics |
LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |