PD57018-E |
Part Number | PD57018-E |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V... |
Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance... |
Document |
PD57018-E Data Sheet
PDF 911.62KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PD57018 |
STMicroelectronics |
RF POWER TRANSISTORS | |
2 | PD57018S |
STMicroelectronics |
RF POWER TRANSISTORS | |
3 | PD57002-E |
STMicroelectronics |
RF POWER transistor | |
4 | PD57006-E |
STMicroelectronics |
RF POWER transistor | |
5 | PD57006S-E |
STMicroelectronics |
RF POWER transistor |