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PD55035-E |
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| Part Number | PD55035-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V... |
| Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity perfor... |
| Document |
 PD55035-E Data Sheet
PDF 452.16KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PD55035S-E |
STMicroelectronics |
RF POWER transistor |
|
| 2 | PD55035STR1-E |
STMicroelectronics |
RF power LDMOS transistor |
|
| 3 | PD55003-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD55003L-E |
STMicroelectronics |
RF POWER transistor |
|
| 5 | PD55008-E |
STMicroelectronics |
RF POWER transistor |
|